Pressure and Temperature Dependence of Energy Gap in SiC and Si1-xGex

Section: Research Paper
Issue
Vol. 28 No. 4 (2019): Volume 28 Issue 4
Published
Dec 1, 2019
Pages
53-61

Abstract

The effect of pressure on energy gap for IV-IV compound SiC and Si1-xGex alloy have been investigated and evaluated by using Birch-Murnaghan equation of state (EOS) and Bardeen equation of state. Ambiguity in the effect of pressure and temperature on Eg of different SiC polytypes (3C, 4H, 6H) have been investigated and attributed.
Variation of Eg in Si1-x Gex evaluated and an interpretation, for it, has been suggested.

Authors

Adnan M. Al-sheikh

Department of Physics\ College of Science\ University of Mosul

Mumtaz M. Hussien

Department of Physics\ College of Education for Pure Science \ University of Mosul

Siham J. Abdullah

Department of Radiology\ Alnoor University College

Identifiers

https://doi.org/10.33899/rjs.2019.163296

Statistics

How to Cite

M. Al-sheikh, A., M. Hussien, M., & J. Abdullah, S. (2019). Pressure and Temperature Dependence of Energy Gap in SiC and Si1-xGex. Rafidain Journal of Science, 28(4), 53–61. https://doi.org/10.33899/rjs.2019.163296